Memory system having non-volatile data storage structure for memory control parameters and method
US5627784A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 28, 1995 |
| Grant date | May 6, 1997 |
| Priority date | — |
| Expiry date | Jul 28, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/44
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory system capable of being configured for optimum operation after fabrication and method of controlling same. The system includes an array of memory cells arranged in a multiplicity of rows and a multiplicity of columns, with each cell located in one of the rows being coupled to a common word line and with each cell located in one of the columns being coupled to a common bit line. Control circuitry is included for controlling memory operations, with the memory operations including programming the memory cells; reading the memory cells and preferably programming the cells. A plurality of non-volatile data storage units are provided for storing control parameter data used by the control means for controlling the memory operations. Such control parameters may can include, for example, parameters for adjusting the magnitude and duration of voltage pulses applied to the memory for carrying out programming and erasing operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.