Method of making a field emission electron source with random micro-tip structures
US5628659A · kind A · utility
28Cited by
105References
18Claims
0Family size
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Key dates
| Filing date | Apr 24, 1995 |
| Grant date | May 13, 1997 |
| Priority date | — |
| Expiry date | Apr 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/319
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method is available for fabricating a field emitter device, where in an emitter material, such as copper, is deposited over a resistive layer which has been deposited upon a substrate. Two ion beam sources are utilized. The first ion beam source is directed at a target material, such as molybdenum, for sputtering molybdenum onto the emitter material. The second ion beam source is utilized to etch the emitter material to produce cones or micro-tips. A low work function material, such as amorphous diamond, is then deposited over the micro-tips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.