Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent
US5630904A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 27, 1995 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Mar 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall pr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.