Method of fabricating high threshold metal oxide silicon read-only-memory transistors

US5631180A · kind A · utility

Assignee

• Zilog, Inc. · US

Inventors

• Alex Gyure · Sunnyvale, US
• John E. Berg · New York, US
• Damian Carver · Colorado Springs, US
• Pete Manos · Boise, US

Key dates

• Filing date: Jun 7, 1995
• Grant date: May 20, 1997
• Expiry date: Jun 7, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/90

Abstract

A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.