Method for producing high efficiency light-emitting diodes and resulting diode structures
US5631190A · kind A · utility
382Cited by
12References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 7, 1994 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Oct 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting wafer and diode structure are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.