Capacitive semiconductor pressure sensor

US5631428A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Ralf Catanescu · Bremen, DE
• Thomas Scheiter · Munich, DE
• Christofer Hierold · Munich, DE

Key dates

• Filing date: Nov 22, 1995
• Grant date: May 20, 1997
• Expiry date: Nov 22, 2015

Classification

• Technology area (CPC G): Physics
• CPC primary: G01L9/0042
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A micromechanically manufacturable pressure sensor has a cavity produced in an auxiliary layer that is covered with a membrane layer, the cavity is produced via recesses in the membrane layer. These recesses are subsequently closed by portions of a closure layer. Further layers can be applied on the closure layer. Portions of the further layers and closure layer are removed above the membrane layer.