Thomas Scheiter
23Patents
13h-index
41Co-inventors
73Inventor score
Filing activity: Oct 25, 1993 → Jan 30, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5918110A | Method for manufacturing a combination of a pressure sensor and an electrochemical sensor | Physics | 55 | Expired |
| US5760455A | Micromechanical semiconductor component and manufacturing method therefor | Performing Operations; Transporting | 55 | Expired |
| US6320239A | Surface micromachined ultrasonic transducer | Physics | 55 | Expired |
| US6140689A | Micromechanical sensor | Electricity | 54 | Expired |
| US5447067A | Acceleration sensor and method for manufacturing same | Physics | 51 | Expired |
| US6668072B1 | Method for producing a reference image for pattern recognition tasks | Physics | 45 | Expired |
| US5373181A | Sensor for sensing fingerpaints and method for producing the sensor | Physics | 42 | Expired |
| US6094985A | Rotation rate sensor | Physics | 26 | Expired |
| US5631428A | Capacitive semiconductor pressure sensor | Physics | 19 | Expired |
| US5974895A | Capacitively measuring sensor and readout circuit | Physics | 18 | Expired |
| US6159762A | Process for producing micromechanical sensors | Physics | 17 | Expired |
| US5431051A | Tunnel effect acceleration sensor | Physics | 15 | Expired |
| US5834332A | Micromechanical semiconductor components and manufacturing method therefor | Performing Operations; Transporting | 14 | Expired |
| US5662772A | Method for the selective removal of silicon dioxide | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5883779A | Pressure sensor | Physics | 8 | Expired |
| US5450754A | Pressure sensor | Physics | 7 | Expired |
| US5700702A | Method for manufacturing an acceleration sensor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6714392B2 | Electronic component and utilization of a guard structure contained therein | Electricity | 4 | Expired |
| US6365888B2 | Method for capacitive image acquisition | Physics | 4 | Expired |
| US6401544B2 | Micromechanical component protected from environmental influences | Electricity | 2 | Expired |
| US6664612B2 | Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials | Electricity | 1 | Expired |
| US7054469B2 | Passivation layer structure | Physics | 0 | Expired |
| US6020050A | Semiconductor chip | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.