Semiconductor device comprising fine bump electrode having small side etch portion and stable characteristics
US5631499A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1996 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Jun 3, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a bump electrode includes a first conductive layer formed on a predetermined portion of a substrate. An insulating layer is formed on the substrate and the first conductive layer. The insulating layer has an opening portion such that a predetermined portion of the first conductive layer is exposed. A second conductive layer is formed on the first conductive layer, a side wall of the opening portion of the insulating layer, and an upper surface of the insulating layer. A third conductive layer is formed to cover at least the insulating layer on the first conductive layer and the second conductive layer along the portion. A fourth conductive layer is formed on the third conductive layer to have an over hang portion. A side etch portion is formed surrounded with an over hang portion of the fourth conductive layer, the third conductive layer, and the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.