Antireflective coating process
US5635333A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 28, 1994 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Dec 28, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Reduction of reflection from an integrated circuit substrate during exposure of a photoresist layer on a surface such as an integrated circuit wafer is minimized by incorporating an antireflective coating between the photoresist layer and the integrated circuit substrate. The antireflective layer, after exposure and development of the photoresist layer, is preferably removed by exposing the non-masked antireflective layer to activating radiation while heating the coating to induce a solubilizing reaction in an antireflective coating and a curing reaction in an overlying photoresist mask. Thereafter, the exposed portions of the antireflective layer are removed by treatment with a suitable developer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.