Method for fabricating semiconductor device utilizing dual photoresist films imaged with same exposure mask
US5635335A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1994 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Dec 12, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device, including the steps of: coating an anti-reflective film over a lower layer to be patterned; coating a first photoresist film over the anti-reflective film and subjecting the first photoresist film to a light exposure process using a mask and a development process, thereby forming a first photoresist film pattern having a dimension slightly larger than a desired pattern dimension; etching an exposed portion of the anti-reflective film, thereby forming an anti-reflective film pattern; removing the first photoresist film pattern and coating a second photoresist film over the entire exposed surface of the resulting structure obtained after the removal of the first photoresist film pattern; subjecting the second photoresist film to a light exposure process using the mask and a development, thereby forming a second photoresist film pattern having the desired pattern dimension; and etching an exposed portion of the anti-reflective film pattern and then etching the lower layer, thereby forming a lower layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.