Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5635409A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 28, 1994 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Oct 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A real-time multi-zone semiconductor wafer temperature and process uniformity control system for use in association with a semiconductor wafer fabrication reactor comprises a multi-zone illuminator (130), a multi-point temperature sensor (132), and process control circuitry (150). The method and system of the invention significantly improved wafer (60) temperature control and process uniformity. The multi-zone illuminator module (130) selectively and controllably heats segments of the semiconductor wafer (60). Multi-point temperature sensor (132) independently performs pyrometry-based temperature measurements of predetermined points of the semiconductor wafer (60). Process control circuitry (150) operates in association with the multi-zone illuminator (130) and the multi-point temperature sensor (132) for receiving the temperature measurements and selectively controlling the illuminator module to maintain uniformity in the temperature measurements. A scatter module (116) also provides input to process control circuitry (150) for real-time emissivity compensation of the pyrometry-based temperature measurements of semiconductor wafer (60).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.