Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5635412A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices are obtained by forming an amorphous silicon carbide termination region in a monocrystalline silicon carbide substrate, at a face thereof, adjacent and surrounding a silicon carbide device. The amorphous termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize the substrate face. The device contact or contacts act as an implantation mask to provide a self-aligned termination region for the device. The terminated devices may exhibit voltage breakdown resistance which approaches the ideal value for silicon carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.