Dev Alok
16Patents
9h-index
8Co-inventors
57Inventor score
Filing activity: Jan 25, 1993 → Jan 22, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6303508A | Superior silicon carbide integrated circuits and method of fabricating | Electricity | 55 | Expired |
| US5449925A | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices | Emerging Cross-Sectional Technologies | 38 | Expired |
| US6373076B1 | Passivated silicon carbide devices with low leakage current and method of fabricating | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5436174A | Method of forming trenches in monocrystalline silicon carbide | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5318915A | Method for forming a p-n junction in silicon carbide | Emerging Cross-Sectional Technologies | 34 | Expired |
| US6323506A | Self-aligned silicon carbide LMOSFET | Electricity | 32 | Expired |
| US5635412A | Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6011278A | Lateral silicon carbide semiconductor device having a drift region with a varying doping level | Electricity | 11 | Expired |
| US6355944B1 | Silicon carbide LMOSFET with gate reach-through protection | Electricity | 10 | Expired |
| US6620697B1 | Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6559068B2 | Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor | Electricity | 7 | Expired |
| US6504184B2 | Superior silicon carbide integrated circuits and method of fabricating | Electricity | 5 | Expired |
| US6703276B2 | Passivated silicon carbide devices with low leakage current and method of fabricating | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6593594B1 | Silicon carbide n-channel power LMOSFET | Electricity | 3 | Expired |
| US6407014B1 | Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6096663A | Method of forming a laterally-varying charge profile in silicon carbide substrate | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.