Silicon carbide LOCOS vertical MOSFET device
US5635732A · kind A · utility
5Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Jan 9, 1995 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Jan 9, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor regions, rather than defining the regions with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS operation can be performed after the doped epitaxial layers are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.