Insulated gate type semiconductor device in which the reliability and characteristics thereof are not deteriorated due to pressing action and power inverter using the same
US5635734A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1995 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Mar 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated gate type semiconductor device has a gate electrode which controls current flow between two regions of the same conductivity type in a semiconductor substrate. A main electrode has a first portion contacting a first one of the two regions, a second portion extending above the gate electrode and a third portion providing a raised external contact surface to contact an external electrode. The gate electrode is insulated above and below by insulating films. To prevent damage to the gate electrode and the lower insulating films due to the pressure of the external electrode, there is a supporting insulating layer on the surface of the substrate underlying the contact portion of the main electrode and having a thickness substantially greater than the thickness of the insulating film below the gate electrode and the contact surface is more remote from the substrate than the second portion of said main electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.