Microwave plasma chemical vapor deposition process using a microwave window and movable, dielectric sheet
US5637358A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 1995 |
| Grant date | Jun 10, 1997 |
| Priority date | — |
| Expiry date | Jan 20, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32495
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface of the microwave introducing window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.