Method for forming an integrated circuit pattern on a semiconductor substrate using silicon-rich silicon nitride

US5639687A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Bernard J. Roman · Austin, US
• Bich-Yen Nguyen · Austin, US
• Chandrasekaram Ramiah · Austin, US

Key dates

• Filing date: Feb 23, 1996
• Grant date: Jun 17, 1997
• Expiry date: Feb 23, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/952
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Reflective notching of a photoresist pattern (20), generated over reflective materials on a semiconductor substrate (12), is minimized by using an anti-reflective layer (20) of silicon-rich silicon nitride. The layer of silicon-rich silicon nitride is formed over the reflective materials and a layer of photoresist is then formed over the silicon-rich silicon nitride. The photoresist layer is then photolithographically patterned to form an integrated circuit pattern (20). The silicon-rich silicon nitride layer has an absorptive index of greater than 0.25, which allows it to be used as an anti-reflective layer with photolithographic patterning systems having ultraviolet and deep ultraviolet exposure wavelengths.