Method for producing a Bi-MOS device
US5641692A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1995 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Dec 18, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/009
Abstract
A method for producing a semiconductor device which decrease the number of processes at the time of producing BiCMOSLSI than the usual. Impurities are introduced into a semiconductor substrate under a second insulating film and a first electric conductive film utilizing a first insulating film and the first conductive film formed on the semiconductor substrate as masks. Therefore, it is able to perform concurrent introduction of impurities into the gate electrode, the source and the drain of the MOSFET, the base electrode of the bipolar transistor, the emitter and the collector contact of the lateral bipolar transistor, the outlet electrode of the capacitor, and the resistor, so that the number of process steps can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.