Method of making semiconductor integrated-circuit capacitor
US5641702A · kind A · utility
69Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1995 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Apr 12, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.