Antifuse element and semiconductor device having antifuse elements
US5641985A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1994 |
| Grant date | Jun 24, 1997 |
| Priority date | — |
| Expiry date | Dec 5, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Antifuse elements for a semiconductor device comprise a bottom electrode, a top electrode, and an antifuse material layer. The bottom electrode is formed of a conductive material having an amorphous structure. The conductive material contains such elements as W, Ti, or a compound thereof. Since there is no grain boundary on the surface of the bottom electrode having an amorphous structure, any sharp protrusions are diminished to promote the smoothness. The antifuse material film is mounted on the surface of the bottom electrode. The bottom electrode contains such elements having an excellent EM resistance as W, Mo. These elements are also to be contained in a filament which is formed after programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.