Method for manufacturing a semiconductor device
US5643826A · kind A · utility
1,362Cited by
15References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1994 |
| Grant date | Jul 1, 1997 |
| Priority date | — |
| Expiry date | Oct 25, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/016
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.