Low temperature deposition of silicon oxides for device fabrication
US5643838A · kind A · utility
40Cited by
14References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1993 |
| Grant date | Jul 1, 1997 |
| Priority date | — |
| Expiry date | Sep 3, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The use of a deposition process involving a plasma struck in a gas including tetraethoxysilane and a source of oxygen yields, at low temperatures, conformal coatings of silicon dioxide. This process has significant implications for semiconductor device fabrication involving the deposition of a dielectric over a metallic non-planar structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.