Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product

US5646073A · kind A · utility

Assignee

• LSI Logic Corporation · US

Inventors

• Douglas T. Grider · McKinney, US
• Jon S. Owyang · San Jose, US

Key dates

• Filing date: Jan 18, 1995
• Grant date: Jul 8, 1997
• Expiry date: Jan 18, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/923

Abstract

A method, and resulting product, are disclosed for selectively forming polycrystalline silicon over exposed portions of a single crystal silicon substrate. The method includes inhibiting the formation of such polycrystalline silicon over adjacent silicon oxide surfaces; and the resulting product of such a process. The polycrystalline silicon is selectively deposited over the single crystal silicon substrate by first forming a thin layer of a lattice mismatched material over the single crystal silicon surface, and then depositing a layer of polycrystalline silicon over the lattice mismatched material. Preferably, the thin lattice mismatched layer comprises a silicon/germanium (SiGe) alloy.