Method of forming gate oxide for field effect transistor
US5646074A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1995 |
| Grant date | Jul 8, 1997 |
| Priority date | — |
| Expiry date | Dec 15, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a process for manufacturing a gate oxide of a MOSFET. Since the performance of the gate oxide is deteriorated in photo resist removing, DI healing and high temperature annealing are introduced to recover the gate oxide. A process for manufacturing the gate oxide of the MOSFET on a wafer, includes the steps of: pre-cleaning the wafer, forming gate oxide layer, coating a photo resist, exposing the photo resist, developing the photo resist, implanting ions over the developed photo resist, removing the photo resist, post-cleaning the gate oxide for the purpose of good attachment of a gate polysilicon layer, DI healing the gate oxide, and annealing the gate oxide at a high temperature. As a result, the pass rates for Ebd and Qbd tests of the gate oxide increase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.