Selective insulation etching for fabricating superconductor microcircuits
US5646095A · kind A · utility
8Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1994 |
| Grant date | Jul 8, 1997 |
| Priority date | — |
| Expiry date | Oct 5, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/728
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively etching insulative material composed of SrTiO3 or MgO in the presence of a copper oxide perovskite superconductive material includes treating the insulative material with a liquid selective etchant solution containing hydrogen fluoride in water for a period of time, the insulative material being etched at a substantially faster rate than the superconductive material etch rate, then treating the superconductive material exposed to the insulative selective with another etchant to remove a surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.