Method of processing a piezoelectric device
US5647932A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1996 |
| Grant date | Jul 15, 1997 |
| Priority date | — |
| Expiry date | Feb 14, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The following steps are performed when processing electronic components such as piezoelectric devices. At Step 1 inter-atom bond is created between a functional member such as a quartz crystal plate and a first substrate, and the functional member and the quartz crystal plate are directly joined together. At Step 2, the functional member and a second substrate are fixed together with an adhesive agent or by a direct bond. At Step 3, the first substrate is removed chemically or mechanically, with said functional member and said second substrate still being joined together. A step of polishing said functional member for the adjustment of thickness thereof may be done between Step 1 and Step 2. For example, a silicon dioxide thin film may be provided between the functional member and the first substrate. Since no adhesive layer exists between the functional member and the first substrate, this improves the degree of plane of the functional member when joined to the first substrate. Therefore, functional member thickness accuracy becomes extremely high and mass productivity is also improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.