Method of making non-uniformly nitrided gate oxide
US5650344A · kind A · utility
22Cited by
3References
19Claims
0Family size
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Inventors
Key dates
| Filing date | Jul 17, 1995 |
| Grant date | Jul 22, 1997 |
| Priority date | — |
| Expiry date | Jul 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device in which a polysilicon gate is separated from a semiconductor substrate by a re-oxidized nitrided oxide film and in which the concentration of re-oxidized nitride in the film underlying the gate is non-uniform. The concentration of nitrogen in the substrate and the re-oxidized nitrided oxide along their interface and underlying the gate is non-uniform. The non-uniform concentrations are provided by incomplete shielding of the oxide by the gate during the nitriding and re-oxidizing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.