Electron microscope
US5650621A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1995 |
| Grant date | Jul 22, 1997 |
| Priority date | — |
| Expiry date | Sep 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The composition change and strained structure in a heterointerface or thin film of a multilayer thin film specimen are observed. When the composition change and strained structure are observed, comparison between a dark-field image and a bright-field image and comparison between two dark-field images are required. The position of an objective aperture disposed between the specimen and a detector is moved rapidly so that diffracted wave or transmitted wave corresponding to the dark-field image or bright-field image of a desired plane index is transmitted. As a result, the dark-field image or bright-field image of a desired plane index can be observed correspondingly to the position of the objective aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.