Selective etch process
US5651856A · kind A · utility
17Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1996 |
| Grant date | Jul 29, 1997 |
| Priority date | — |
| Expiry date | Jan 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an etch process wherein hydrogen monoiodide (HI) ions are employed to bombard a patterned film, thereby creating geometric features in the patterned film with substantially anisotropic sidewalls. The etch process has a high selectivity to oxide, allowing the etch process to terminate on a thin pad oxide, especially when using a two step etch process. The etch process is also highly selective to photoresist, further enhancing the resulting anisotropic nature of the geometrical feature sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.