Vertical structure schottky diode optical detector
US5652435A · kind A · utility
6Cited by
14References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1995 |
| Grant date | Jul 29, 1997 |
| Priority date | — |
| Expiry date | Sep 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/227
Abstract
A vertical structure Schottky contact photodiode has a narrow bandgap InGaAs light absorbing layer cladded front and back with InAlAs current blocking layers having metal contacts formed thereon. As compared to single-side MSM photodiodes, with interdigitated electrodes lying in a single plane, response time is improved due to reduced spacing between the electrodes. Response time is also improved since capacitance is reduced due to inherently low doping levels in the semiconductor material. Laterally offset finger electrodes are made light reflective to increase the production of carriers in the InGaAs absorption layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.