Method for controlling growth of a silicon crystal
US5653799A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Aug 5, 1997 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
System and method for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a surface with a meniscus which is visible as a bright ring adjacent the crystal. A camera generates an image pattern of a portion of the bright ring adjacent the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.