Gas injection system for CVD reactors
US5653808A · kind A · utility
Inventors
Key dates
| Filing date | Aug 7, 1996 |
| Grant date | Aug 5, 1997 |
| Priority date | — |
| Expiry date | Aug 7, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates reactant gases from the pressure chamber. The reactor also includes a gas injection system which injects process gas(es) into the reaction chamber in a somewhat vertical direction through a bottom surface of the reaction chamber. The gas injection system injects hydrogen or other appropriate gas in a vertical direction through the bottom surface of the reaction chamber. The flow of hydrogen or other appropriate gas is intermediate the flow of the process gas(es) and a surface of the reaction chamber, thereby re-directing the process gas flow parallel to the top surface of a wafer therein. In this manner, the reaction chamber does not require a long entry length for the process gas(es). This flow of hydrogen or other suitable gas also minimizes undesirable deposition on the surface of the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.