Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step
US5654208A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1995 |
| Grant date | Aug 5, 1997 |
| Priority date | — |
| Expiry date | May 8, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for producing a semiconductor device having a semiconductor layer of SiC. The method comprises the steps of a) applying a mask on at least a portion of the SiC layer to coat a first portion of the SiC layer leaving a second portion thereof uncoated, b) applying a heat treatment to the SiC layer, and c) supplying dopants to the SiC layer during the heat treatment for diffusion of the dopants into the SiC layer at the second portion thereof for doping the SiC layer. The mask is made of crystalline AIN as the only component or AIN as a major component of a crystalline alloy constituting the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.