Christopher Harris
36Patents
15h-index
24Co-inventors
77Inventor score
Filing activity: May 8, 1995 → May 31, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5804483A | Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device | Emerging Cross-Sectional Technologies | 74 | Expired |
| US5763905A | Semiconductor device having a passivation layer | Electricity | 72 | Expired |
| US6025608A | Semiconductor device of SiC with insulating layer and a refractory metal nitride layer | Electricity | 68 | Expired |
| US5977605A | SiC Semiconductor device comprising a pn Junction with a voltage absorbing edge | Emerging Cross-Sectional Technologies | 67 | Expired |
| US6104043A | Schottky diode of SiC and a method for production thereof | Electricity | 66 | Expired |
| US6091108A | Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage | Electricity | 57 | Expired |
| US5851908A | Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC | Emerging Cross-Sectional Technologies | 55 | Expired |
| US5654208A | Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step | Emerging Cross-Sectional Technologies | 53 | Expired |
| US5663580A | Optically triggered semiconductor device | Electricity | 39 | Expired |
| US5932894A | SiC semiconductor device comprising a pn junction | Electricity | 30 | Expired |
| US5967795A | SiC semiconductor device comprising a pn junction with a voltage absorbing edge | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5900648A | Semiconductor device having an insulated gate | Electricity | 23 | Expired |
| US5831292A | IGBT having a vertical channel | Electricity | 17 | Expired |
| US6306773A | Method of producing a semiconductor device of SiC | Performing Operations; Transporting | 16 | Expired |
| US6127695A | Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5650638A | Semiconductor device having a passivation layer | Electricity | 12 | Expired |
| US6150671A | Semiconductor device having high channel mobility and a high breakdown voltage for high power applications | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6096627A | Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5773849A | Field of the invention | Electricity | 11 | Expired |
| US5786251A | Method for producing a channel region layer in a voltage controlled semiconductor device | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5698472A | Method and a device for oxidation of a semiconductor layer of SIC | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5923051A | Field controlled semiconductor device of SiC and a method for production thereof | Electricity | 10 | Expired |
| US5798293A | Method for producing a semiconductor layer of SiC of the 3C-polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layer | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5909039A | Insulated gate bipolar transistor having a trench | Electricity | 9 | Expired |
| US6278133A | Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof | Electricity | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.