Implantation of nucleating species for selective metallization and products thereof
US5654245A · kind A · utility
67Cited by
6References
29Claims
0Family size
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Inventor
Key dates
| Filing date | Mar 23, 1993 |
| Grant date | Aug 5, 1997 |
| Priority date | — |
| Expiry date | Mar 23, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method and structure in which a nucleating species [54] is implanted through apertures [52] of a metal-phobic layer [40] into a support layer [17] and copper or a like metal is selectively grown at the implant site or sites. The implant support layer [17] is preferably composed of a material which inhibits diffusion therethrough of the copper or other like grown metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.