Integrated circuit capacitor
US5654581A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Aug 5, 1997 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
Abstract
An integrated circuit with a capacitor includes a conductive substrate, a layer of field dielectric formed on the conductive substrate, a layer of conductive metal or conductive polycrystalline silicon formed on the field dielectric, and first and second laterally spaced apart layers of conductive material formed on the conductive metal or polycrystalline silicon. Each spaced apart layer preferably includes a layer of titanium nitride disposed over a layer of titanium. A layer of capacitor dielectric is deposited on the first of the spaced apart layers, and metal is deposited over the capacitor dielectric and the second layer of conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.