Method and apparatus for real time monitoring of wafer attributes in a plasma etch process
US5654903A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1995 |
| Grant date | Aug 5, 1997 |
| Priority date | — |
| Expiry date | Nov 7, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05B13/027
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and apparatus for monitoring the state of an attribute of a product during the manufacturing process. The invention employs an intelligent system trained in the relationship between the signatures of the manufacturing process and the product attribute as a function of time. In one embodiment the intelligent system comprises two intelligent systems: the first, trained in the relationship between the signatures of the manufacturing process and one or more signatures of the state of the attribute as a function of time; and the second, trained in the relationship between the product-state signatures as a function of time and the product attribute as a function of time. The disclosed apparatus can be an integral part of the manufacturing machinery allowing the process to continue until the exact moment when the desired state is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.