Method of forming a polysilicon resistor using an oxide, nitride stack
US5656524A · kind A · utility
81Cited by
19References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Aug 12, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
A polysilicon resistor (40) includes a field oxide layer (12) and a polysilicon layer (20) that covers a portion of field oxide layer (12). The polysilicon layer (20) possesses a predetermined electrical resistance value. Nitride/oxide stack (42) covers a predetermined portion of the polysilicon layer (20) and forms at least one exposed location of polysilicon layer (20) on which not to implant a dopant to achieve a predetermined resistance value. Silicide layer (34) covers exposed location.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.