David B. Scott
57Patents
18h-index
74Co-inventors
87Inventor score
Filing activity: May 29, 1981 → Mar 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8432071B2 | Method and apparatus for energy harvest from ambient sources | Electricity | 276 | Active |
| US4374700A | Method of manufacturing silicide contacts for CMOS devices | Electricity | 126 | Expired |
| US7307471B2 | Adaptive voltage control and body bias for performance and energy optimization | Electricity | 105 | Expired |
| US5656524A | Method of forming a polysilicon resistor using an oxide, nitride stack | Electricity | 81 | Expired |
| US7282905B2 | System and method for IDDQ measurement in system on a chip (SOC) design | Physics | 69 | Expired |
| US5291444A | Combination DRAM and SRAM memory array | Physics | 65 | Expired |
| US5019888A | Circuit to improve electrostatic discharge protection | Electricity | 54 | Expired |
| US4984196A | High performance bipolar differential sense amplifier in a BiCMOS SRAM | Electricity | 48 | Expired |
| US7639056B2 | Ultra low area overhead retention flip-flop for power-down applications | Emerging Cross-Sectional Technologies | 47 | Expired |
| US7236396B2 | Area efficient implementation of small blocks in an SRAM array | Electricity | 43 | Expired |
| US4476482A | Silicide contacts for CMOS devices | Electricity | 34 | Expired |
| US6178136A | Semiconductor memory device having Y-select gate voltage that varies according to memory cell access operation | Physics | 32 | Expired |
| US5021851A | NMOS source/drain doping with both P and As | Emerging Cross-Sectional Technologies | 30 | Expired |
| US4420344A | CMOS Source/drain implant process without compensation of polysilicon doping | Electricity | 25 | Expired |
| US6141259A | Dynamic random access memory having reduced array voltage | Electricity | 20 | Expired |
| US4754314A | Split-level CMOS | Electricity | 20 | Expired |
| US7164291B2 | Integrated header switch with low-leakage PMOS and high-leakage NMOS transistors | Electricity | 19 | Expired |
| US5506874A | Phase detector and method | Electricity | 18 | Expired |
| US8504972B2 | Standard cells having flexible layout architecture/boundaries | Physics | 17 | Active |
| US4406710A | Mask-saving technique for forming CMOS source/drain regions | Electricity | 17 | Expired |
| US4851360A | NMOS source/drain doping with both P and As | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5102811A | High voltage bipolar transistor in BiCMOS | Electricity | 16 | Expired |
| US5227269A | Method for fabricating high density DRAM reticles | Physics | 14 | Expired |
| US5070381A | High voltage lateral transistor | Electricity | 12 | Expired |
| US6678202B2 | Reduced standby power memory array and method | Physics | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.