Thin film transistor having crystalline semiconductor layer obtained by irradiation
US5656825A · kind A · utility
233Cited by
2References
53Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Aug 12, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An amorphous semiconductor film having a thickness of 400.ANG. or more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness 300.ANG. or less. This is used as a channel-forming region in a TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.