Two-level spiral inductor structure having a high inductance to area ratio
US5656849A · kind A · utility
71Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1996 |
| Grant date | Aug 12, 1997 |
| Priority date | — |
| Expiry date | Jan 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-Q monolithic inductor structure formed using conventional silicon technology and having a first complete lower inductor spiral formed on a substrate and a second complete upper formed on a insulating layer over the first inductor spiral. Central portions of the inductor spirals are connected through a via hole in the insulating layer. The inductor spirals are oriented such that the current flows in the first and second spirals are in the same direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.