Semiconductor device with bump structure
US5656858A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1995 |
| Grant date | Aug 12, 1997 |
| Priority date | — |
| Expiry date | Oct 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, which has a high adhesiveness to the Cu film and the barrier metal at the bump part or LSI wiring part of a flip chip, is disclosed. On a silicon substrate are formed a transistor as a functional element and a bump for making contact with the transistor and an external substrate. On the surface of the silicon substrate is formed a metallic film, and on the metallic film is formed an insulating film, and a part of the metallic film is exposed through a contact hole. On the metallic film within the contact hole is formed a barrier metal made of TiN, and on the barrier metal is formed a bonding layer made of Ti. On the bonding layer is formed a bump growing Cu film, and on the bump growing Cu film is formed a bump structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.