SOI substrate and method of producing the same
US5658809A · kind A · utility
28Cited by
7References
9Claims
0Family size
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Key dates
| Filing date | Mar 13, 1995 |
| Grant date | Aug 19, 1997 |
| Priority date | — |
| Expiry date | Mar 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.