Tatsuhiko Katayama
3Patents
3h-index
3Co-inventors
36Inventor score
Filing activity: Mar 13, 1995 → Aug 19, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5658809A | SOI substrate and method of producing the same | Electricity | 28 | Expired |
| US5918136A | SOI substrate and method of producing the same | Electricity | 24 | Expired |
| US5665613A | Method of making semiconductor device having SIMOX structure | Emerging Cross-Sectional Technologies | 22 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.