Electron-beam treatment procedure for patterned mask layers
US5660957A · kind A · utility
131Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1996 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | May 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for pretreating patterned masks layers, such as photoresist masks, with electron-beam radiation for use in high temperature processes are disclosed. The electron-beam exposure deactivates compounds within the mask material which would ordinarily decompose and produce gasses within the photoresist layer. The gasses cause blistering in the untreated photoresist layer, which in turn degrades the dimensional integrity of the untreated layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.