Boron penetration to suppress short channel effect in P-channel device
US5661059A · kind A · utility
30Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1995 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Apr 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a set of p-channel devices with enhanced n-doping and penetration of boron into the channel region between the source and drain regions, thereby creating channel length independent p-channel threshold voltage behavior. Long channel and short channel transistors have approximately equal threshold voltages as (a) short channel effect is reduced with increased n-doping in short channel transistors (where boron penetration has little effect), and (b) the effects of boron penetration and increased n-doping are offset in longer channel transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.