Silicon carbide MOSFET
US5661312A · kind A · utility
41Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1995 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Mar 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A silicon carbide MOSFET (10) is formed to have a high breakdown voltage. A breakdown enhancement layer (20) is formed between a channel region (14) and a drift layer (12). The breakdown enhancement layer (20) has a lower doping concentration that increases the width of a depletion region (24) near a gate insulator (17). The increased depletion region width improves the breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.