Method for bonding compound semiconductor wafers to create an ohmic interface
US5661316A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1996 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Sep 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0421
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming an ohmic interface between unipolar (isotype) compound semiconductor wafers without a metallic interlayer and the semiconductor devices formed with these ohmic interfaces are disclosed. The ohmic interface is formed by simultaneously matching the crystallographic orientation of the wafer surfaces and the rotational alignment within the surfaces of the two wafers and then subjecting them to applied uniaxial pressure under high temperatures to form the bonded ohmic interface. Such an ohmic interface is required for the practical implementation of devices wherein electrical current is passed from one bonded wafer to another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.