Optically triggered semiconductor device
US5663580A · kind A · utility
39Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1996 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Mar 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/255
Abstract
A semiconductor device comprises a semiconductor layer of SiC having an active area through which the device is adapted to be triggered by light incident thereon and means for generating and emitting light with an energy exceeding the bandgap, being the energy difference between the conduction band and the valence band, of the SiC-layer of the active area. The generating means is directly integrated in the device by being placed so as to cover substantial portions of the active area, and being made of a Group 3B-nitride having a larger bandgap that of the SiC of the SiC-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.