Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate
US5663583A · kind A · utility
127Cited by
1References
32Claims
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Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer comprising a wide-gap semiconductor material having the formula Al.sub.1-y Ga.sub.y P.sub.0.71+z Sb.sub.0.29-z.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.